Spin Filtering Magnetoresistance in Double‐Well Resonant Structures

Resonant inversion of tunneling magnetoresistance.

Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven stati...

Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures

Angular dependence of tunnel magnetoresistance in magnetic tunnel junctions and specific aspects in spin-filtering devices

We propose a general formalism to describe accurately the angular dependence of the magnetoresistance. A parabolic band model is used to determine without approximation the conductance of arbitrary complex heterostructures. Simple analytical expressions are obtained in some limit cases. Particularly, we show that significant deviation from the cosine dependence is expected for ferromagnetic bar...

Giant magnetoresistance in organic spin valves.

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method...

Spin Hall magnetoresistance in a canted ferrimagnet

Kathrin Ganzhorn,1,2 Joseph Barker,3 Richard Schlitz,1,2 Benjamin A. Piot,4 Katharina Ollefs,5,6 Francois Guillou,5 Fabrice Wilhelm,5 Andrei Rogalev,5 Matthias Opel,1 Matthias Althammer,1,2 Stephan Geprägs,1 Hans Huebl,1,2,7 Rudolf Gross,1,2,7 Gerrit E. W. Bauer,3,8,9 and Sebastian T. B. Goennenwein1,2,7,* 1Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, German...